cystech electronics corp. spec. no. : c 05 6 q8 issued date : 20 16 . 08 . 26 revised date : 2016. 1 1 . 0 8 page no. : 1 / 9 mtb01 2 n10rq8 cyste k product specification n - channel enhancement mode power mosfet mtb01 2 n10rq8 features ? single drive requirement ? low on - resistance ? fast switching characteristic ? repetitive avalanche rated ? pb - free & halogen - free package symbol outline o rdering inf ormation device package shipping mtb01 2 n10rq8 - 0 - t3 - g sop - 8 (rohs compliant & halogen - free package) 25 00 pcs / tape & reel mtb01 2 n10rq8 so p - 8 g gate d drain s source p in 1 bv dss 100v i d @ t a =25 c, v gs =10v 10a r ds(on) @v gs =10v, i d =10a 10.3 m (typ) r ds(on) @v gs =4.5v, i d =8a 12.3 m (typ) environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13 reel product rank, zero for no rank products product name s s s g d d d d
cystech electronics corp. spec. no. : c 05 6 q8 issued date : 20 16 . 08 . 26 revised date : 2016. 1 1 . 0 8 page no. : 2 / 9 mtb01 2 n10rq8 cyste k product specification absolute maximum ratings (t c =25 ? c , unless otherwise noted ) parameter symbol limits unit drain - sour c e voltage v ds 10 0 v gate - source voltage v gs 20 continuous drain current @ t a =25 ? c , v gs =10v i d 10 a continuous drain current @ t a =70 ? c , v gs =10v 8 pulsed drain current i dm 40 *1 avalanche current @ l=0.1mh i as 40 avalanche energy @ l=2mh, i d =18a, v dd =25v e as 324 *3 mj repetitive avalanche energy @ l=0.05mh e ar 1.6 *2 total power dissipat ion t a =25 ? c p d 3.1 w t a =70 ? c 2 operating junction and storage temperature tj, tstg - 55~+1 50 ? c note : *1 . pulse width limited by maximum junction temperature *2. duty cycle 1% *3. 100% tested b y conditions of l=2mh, i as =10a, v gs =10v, v dd =25v thermal data parameter symbol value unit thermal resistance, junction - to - case r jc 20 ? c /w thermal resistance, junction - to - ambient (note) r ja 40 note : 4 0c / w when mounted on a 1 in 2 pad of 2 oz copper , t 10s; 125 c/w when mounted on minimum pad. characteristics (t c =25 ? symbol min. typ. max. unit test conditions static bv dss 100 - - v v gs = 0 v, i d = 250 a v gs(th) 1 - 2.5 v ds = v gs , i d = 250 a g fs - 19.8 - s v ds = 10v , i d = 5a i gss - - 100 n a v gs = 20 v i dss - - 1 a v ds = 80v, v gs =0 v - - 25 v ds = 80v, v gs =0 v , tj=125 ? c *r ds ( on ) - 10.3 13.5 m v gs = 10v , i d = 10a - 12.3 18.5 v gs = 4.5v , i d = 8a dynamic qg *1, 2 - 49.2 - nc v ds =80v, v gs =10v, i d =10a qgs *1, 2 - 9.0 - qgd *1, 2 - 5.3 - ciss - 3015 - pf v ds =50v, v gs =0v, f=1mhz coss - 182 - crss - 12 -
cystech electronics corp. spec. no. : c 05 6 q8 issued date : 20 16 . 08 . 26 revised date : 2016. 1 1 . 0 8 page no. : 3 / 9 mtb01 2 n10rq8 cyste k product specification characteristics ( cont. t c =25 ? symbol min. typ. max. unit test conditions dynamic t d(on) *1, 2 - 18.4 - ns v ds =50v, i d =10a, v gs =10v, r gs =3 tr *1, 2 - 17.8 - t d(off) *1, 2 - 61.6 - t f *1, 2 - 8.2 - source - drain diode ratings and characteristics i s *1 - - 10 a i sm *3 - - 40 v sd *1 - 0.79 1.2 v i s =10a, v gs =0v trr - 35 - ns i f =10a, di f /dt=100a/ s qr r - 57 - nc note : * 1. pulse test : pulse width ? 3 0 0s, duty cycle ? 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. recommended soldering footprint
cystech electronics corp. spec. no. : c 05 6 q8 issued date : 20 16 . 08 . 26 revised date : 2016. 1 1 . 0 8 page no. : 4 / 9 mtb01 2 n10rq8 cyste k product specification typical character istics typical output characteristics 0 4 8 12 16 20 24 28 32 36 40 0 2 4 6 8 10 v ds , drain-source voltage(v) i d , drain current(a) 10v,9v,8v,7v,6v,5v 3 v 2. 5v v gs =2v 4v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs = 4.5 v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25 c tj=150 c static drain-source on-state resistance vs gate-source voltage 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =10a drain-source on-state resistance vs junction tempearture 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =10a r ds(on) @tj=25c : 10.3m typ.
cystech electronics corp. spec. no. : c 05 6 q8 issued date : 20 16 . 08 . 26 revised date : 2016. 1 1 . 0 8 page no. : 5 / 9 mtb01 2 n10rq8 cyste k product specification typical characteristics (cont.) capacitance vs drain-to-source voltage 1 10 100 1000 10000 0 10 20 30 40 50 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss f=1mhz threshold voltage vs junction tempearture 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) pulsed ta=25c v ds =15v v ds =10v gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =10a v ds =80v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) dc 10 0 ms 1 s 1 0 ms 100 s 1m s r ds(on) limited t a =25c, tj=150c v gs =10v,r ja =40c/w single pulse maximum drain current vs junction temperature 0 2 4 6 8 10 12 25 50 75 100 125 150 175 t j , junction temperature( c) i d , maximum drain current(a) t a =25c,r ja =40c/w,v gs =10v
cystech electronics corp. spec. no. : c 05 6 q8 issued date : 20 16 . 08 . 26 revised date : 2016. 1 1 . 0 8 page no. : 6 / 9 mtb01 2 n10rq8 cyste k product specification typical characteristics (cont.) typical transfer characteristics 0 4 8 12 16 20 24 28 32 36 40 0 1 2 3 4 5 6 7 8 9 10 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v single pulse power rating, junction to ambient (note on page 2) 0 50 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =40c/w transient thermal response curves 0.001 0.01 0.1 1 10 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =40c/w
cystech electronics corp. spec. no. : c 05 6 q8 issued date : 20 16 . 08 . 26 revised date : 2016. 1 1 . 0 8 page no. : 7 / 9 mtb01 2 n10rq8 cyste k product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c 05 6 q8 issued date : 20 16 . 08 . 26 revised date : 2016. 1 1 . 0 8 page no. : 8 / 9 mtb01 2 n10rq8 cyste k product specification recommended wave soldering condition product peak temperature soldering time pb - free devices 260 +0/ - 5 ? c 5 +1/ - 1 seconds recommended temperature profile for ir reflow profile feat ure sn - pb eutectic assembly pb - free assembly average ramp - up rate (tsmax to tp) 3 ? c /second max. 3 ? c /second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 ? c 150 ? c 60 - 120 seconds 150 ? c 200 ? c 60 - 180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 ? c 60 - 150 seconds 217 ? c 60 - 150 seconds peak temperature(t p ) 240 +0/ - 5 ? c 260 +0/ - 5 ? c time within 5 ? c of actual peak temperature(tp) 10 - 30 seconds 20 - 40 seconds ramp down rate 6 ? c /second max. 6 ? c /second max. time 25 ? c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of th e package, measured on the package body surface.
cystech electronics corp. spec. no. : c 05 6 q8 issued date : 20 16 . 08 . 26 revised date : 2016. 1 1 . 0 8 page no. : 9 / 9 mtb01 2 n10rq8 cyste k product specification so p - 8 dimension dim millimeters inches dim millimeters inches min. max. min. max. min. max. min. max. a 1.350 1.750 0.053 0.069 e 3.800 4.000 0.150 0. 157 a1 0.1 00 0. 250 0.004 0.010 e1 5 .800 6.200 0. 228 0. 244 a2 1.350 1.550 0.053 0.061 e 1.270 (bsc) 0.050 (bsc) b 0. 330 0. 510 0.013 0.020 l 0. 400 1.270 0. 016 0. 0 5 0 c 0. 170 0. 250 0. 006 0. 010 0 8 0 8 d 4.700 5.100 0.185 0.200 notes: 1. controlling dimension: millimeters. 2 . max imum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please contact your local cystek sales office. material: ? ? mold compound: epoxy resin family, flammability solid burning class: ul94v - 0 . important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cyste k . ? cyste k reser ves the right to make changes to its products without notice. ? cyste k semiconductor products are not warranted to be suitable for use in life - support applications, or systems. ? cyste k assumes no liability for any consequence of customer product design, i nfringement of patents, or application assistance. marking: 8 - lead so p - 8 plastic package cystek package code: q 8 date code device name b01 2 n 10r date code(counting from left to right) : 1 st code: year code, the last digit of christian year 2 nd code : month code, jan a, feb b, mar c, apr d may e, jun f, jul g, aug h, sep j, oct k, nov l, dec m 3 rd and 4 th codes : prodcution serial number, 01~99
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